Deep electron traps responsible for higher quantum efficiency in improved GaN/InGaN light emitting diodes embedded with SiO2 nanoparticles
AY Polyakov, NB Smirnov, EB Yakimov, Han-Su Cho, Jong Hyeob Baek, AV Turutin, IV Shemerov, ES Kondratyev, In-Hwan Lee*, ECS J. Solid State Sci. Technol.,
~2016
IF: 1.81 (JCR Top 46.91%)
https://doi.org/10.1149/2.0051612jss
Publication date: 12 Oct 2016