Electrical properties, structural properties, and deep trap spectra of thin a-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates
Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov, A.V. Chernykh, A.I. Kochkova, S.J. Pearton, In-Hwan Lee*, APL Mater.,
2018
IF: 4.12 (JCR Top 17.4%)
Publication date: 01 Dec 2018