Deep electron traps responsible for higher quantum efficiency in improved GaN/InGaN light emitting diodes embedded with SiO2 nanoparticles > Journal

Deep electron traps responsible for higher quantum efficiency in improved GaN/InGaN light emitting diodes embedded with SiO2 nanoparticles
Year	~2016
Journal	ECS J. Solid State Sci. Technol.
Author	AY Polyakov, NB Smirnov, EB Yakimov, Han-Su Cho, Jong Hyeob Baek, AV Turutin, IV Shemerov, ES Kondratyev, In-Hwan Lee*
Link	https://doi.org/10.1149/2.0051612jss 1312회 연결
IF: 1.81 (JCR Top 46.91%) https://doi.org/10.1149/2.0051612jss Publication date: 12 Oct 2016

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