| Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy | |
|---|---|
| Year | ~2016 |
| Journal | J. Appl. Phys. |
| Author | AY Polyakov, NB Smirnov, EB Yakimov, In-Hwan Lee*, SJ Pearton |
| Link |
https://doi.org/10.1063/1.4939649
1309회 연결
|
IF: 2.17 (JCR Top 39.38%) https://doi.org/10.1063/1.4939649 Publication date: 07 Jan 2016 |
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