Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si > Journal

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Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si
Year	2020
Journal	Appl. Phys. Lett.
Author	Geunhwan Ryu, Seungwan Woo, Soo Seok Kang, Rafael Jumar Chu, Jae-Hoon Han, In-Hwan Lee, Daehwan Jung, Won Jun Choi
Link	https://doi.org/10.1063/5.0032027 824회 연결
IF: 3.59 (JCR Top 23.5%) https://doi.org/10.1063/5.0032027 Publication date: 28 Dec 2020