Dislocations introduced in n-GaN at room temperature cause conductivity inversion > Journal

Publication Laboratory for Optoelectronic Materials

Dislocations introduced in n-GaN at room temperature cause conductivity inversion
Year	2021
Journal	J. Alloy. Compd.
Author	E.B.Yakimov, P.S.Vergeles, A.Y.Polyakov, I.V.Shchemerov, A.V.Chernyh, A.A.Vasilev, A.I.Kochkova, In-Hwan Lee*, S.J.Pearton
Link	https://doi.org/10.1016/j.jallcom.2021.160281 43회 연결
IF: 5.31 (JCR Top 6.87%) https://doi.org/10.1016/j.jallcom.2021.160281 Publication date: 05 Oct 2021