Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles | |
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Year | 2016 |
Journal | ECS J. Solid State Sci. Technol. |
Author | A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, Han-Su Cho, Jong Hyeob Baek, A. V. Turutin, I. V. Shemerov, E. S. Kondratyev, In-Hwan Lee* |