Publication Laboratory for Optoelectronic Materials

Journal
  • Publication
  • Journal
Total 185건 11 페이지
2017
35 Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges In-Hwan Lee, A.Y. Polyakov, N.B. Smirnov, R.A. Zinovyev, Kang-Bin Bae, Tae-Hoon Chung, Sung-Min Hwang, J.H. Baek, S.J. Pearton, Appl. Phys. Lett., 2017

IF: 3.41 (JCR Top 19.2%)
Publication date: 08 May 2017

LINK
34 Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy A.Y. Polyakov, Jin-Hyeon Yun, A.S. Usikov, E.B. Yakimov, N.B. Smirnov, K.D. Shcherbachev, H.Helava, Y.N. Makarov, S.Y. Kurin, N.M. Shmidt, O.I. Rabinovich, S.I. Didenko, S.A. Tarelkin, B.P. Papchenko, In-Hwan Lee, Mod. Electron. Mater., 2017

Publication date: 01 Mar 2017

LINK
33 Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy In-Hwan Lee, A.Y. Polyakov, E.B. Yakimov, N.B. Smirnov, I.V. Shchemerov, S.A. Tarelkin, S.I. Didenko, K.I. Tapero, R.A. Zinovyev, S. J. Pearton, Appl. Phys. Lett., 2017

IF: 3.41 (JCR Top 19.2%)
Publication date: 13 Mar 2017

LINK
32 Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes In-Hwan Lee, Han-Su Cho, K.B. Bae, A.Y. Polyakov, N.B. Smirnov, R.A. Zinovyev, J.H. Baek, Tae-Hoon Chung, I.V. Shchemerov, E.S. Kondratyev, S.J. Pearton, J. Appl. Phys., 2017

IF: 2.06 (JCR Top 39.5%)
Publication date: 28 Jan 2017

LINK
31 Current relaxation analysis in AlGaN/GaN high electron mobility transistors A.Y. Polyakov, N.B. Smirnov, I. Schemerov, In-Hwan Lee*, J. Vac. Sci. Technol. B, 2017

IF: 1.57 (JCR Top 54.7%)
Publication date: 01 Jan 2017

LINK
30 Low Temperature Solution Processed SnO2 Nanoparticles as Cathode Buffer Layer for Inverted Organic Solar Cells Van-Huong Tran, Rohan B. Ambade, Swapnil B. Ambade, Soo-Hyoung Lee, In-Hwan Lee*, ACS Appl. Mater. Interfaces, 2017

IF: 7.5 (JCR Top 7.81%)
Publication date: 18 Jan 2017

LINK
~2016
29 Electrophoretic deposition of CdSe@ CdZnS–ZnS multi core–shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs Sudarsan Raj, Rizwan Khan, In-Hwan Lee, Kwang-Un Jeong, Yeon-Tae Yu, RSC Adv., ~2016

IF: 2.93 (JCR Top 41.22%)

https://doi.org/10.1039/C6RA12925K

Publication date: 29 Sep 2016

LINK
28 Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy AY Polyakov, NB Smirnov, EB Yakimov, In-Hwan Lee*, SJ Pearton, J. Appl. Phys., ~2016

IF: 2.17 (JCR Top 39.38%)

https://doi.org/10.1063/1.4939649

Publication date: 07 Jan 2016

LINK
27 Flexible and patterned thin film polarizer: photopolymerization of perylene-based lyotropic chromonic reactive mesogens Pureun Im, Dong-Gue Kang, Dae-Yoon Kim, Yu-Jin Choi, Won-Jin Yoon, Myong-Hoon Lee, In-Hwan Lee, Cheul-Ro Lee, Kwang-Un Jeong, ACS Appl. Mater. Interfaces, ~2016

IF: 8.09 (JCR Top 8.94%)

https://doi.org/10.1021/acsami.5b09995

Publication date: 13 Jan 2016


LINK
26 Localized surface plasmon enhanced photoluminescence of ZnO nanosheets by Au nanoparticles Rizwan Khan, Periyayya Uthirakumar, Kang-Bin Bae, See-Jong Leem, In-Hwan Lee*, Mater. Lett., ~2016

IF: 2.68 (JCR Top 29.79%)

https://doi.org/10.1016/j.matlet.2015.10.033

Publication date: 15 Jan 2016

LINK
25 Enhanced photovoltaic performance of back-illuminated dye-sensitized solar cell based on TiO2 nanoparticle/nanowire composite film in cobalt redox system Kyung-Won Lee, Myoung Kim, Ju-Mi Kim, Jeum Jong Kim, In-Hwan Lee*, J. Alloy. Compd., ~2016

IF: 3.77 (JCR Top 4.67%)

https://doi.org/10.1016/j.jallcom.2015.10.001

Publication date: 25 Jan 2016

LINK
24 Carbon quantum dots decorated N-doped ZnO: synthesis and enhanced photocatalytic activity on UV, visible and daylight sources with suppressed photocorrosion S Muthulingam, Kang Bin Bae, Rizwan Khan, In-Hwan Lee*, Periyayya Uthirakumar, J. Environ. Chem. Eng., ~2016

IF: 7.4 (JCR Top 10.3%)

https://doi.org/10.1016/j.jece.2015.06.029

Publication date: 01 Mar 2016

LINK
23 Radiation enhanced basal plane dislocation glide in GaN Eugene B Yakimov, Pavel S Vergeles, Alexander Y Polyakov, In-Hwan Lee, Stephen J Pearton, Jpn. J. Appl. Phys., ~2016

IF: 1.45 (JCR Top 64.04%)

http://doi.org/10.7567/JJAP.55.05FM03

Publication date: 05 Apr 2016

LINK
22 Electrical, luminescent and structural properties of nanopillar GaN/InGaN multi-quantum-well structures prepared by dry etching AY Polyakov, Han-Su Cho, Jin-Hyeon Yun, In-Hwan Lee*, EB Yakimov, NB Smirnov, KD Shcherbachev, ECS J. Solid State Sci. Technol., ~2016

IF: 1.81 (JCR Top 46.91%)

http://doi.org/10.1149/2.0171606jss

Publication date: 14 Apr 2016


LINK
21 Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition In-Hwan Lee, Alexander Y Polyakov, Nikolai B Smirnov, Eugene B Yakimov, Sergey A Tarelkin, Andery V Turutin, Ivan V Shemerov, Stephen J Pearton, Appl. Phys. Express, ~2016

IF: 2.55 (JCR Top 33.9%)

http://doi.org/10.7567/APEX.9.061002

Publication date: 06 May 2016

LINK
게시물 검색