| Current relaxation analysis in AlGaN/GaN high electron mobility transistors | |
|---|---|
| Year | 2017 |
| Journal | J. Vac. Sci. Technol. B |
| Author | A.Y. Polyakov, N.B. Smirnov, I. Schemerov, In-Hwan Lee* |
| Link |
https://doi.org/10.1116/1.4973973
1375회 연결
|
IF: 1.57 (JCR Top 54.7%) Publication date: 01 Jan 2017 |
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