Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy > Journal

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy
Year	2017
Journal	Appl. Phys. Lett.
Author	In-Hwan Lee, A.Y. Polyakov, E.B. Yakimov, N.B. Smirnov, I.V. Shchemerov, S.A. Tarelkin, S.I. Didenko, K.I. Tapero, R.A. Zinovyev, S. J. Pearton
Link	https://doi.org/10.1063/1.4978641 1578회 연결
IF: 3.41 (JCR Top 19.2%) https://doi.org/10.1063/1.4978641 Publication date: 13 Mar 2017

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