| Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy | |
|---|---|
| Year | 2016 |
| Journal | J. Appl. Phys. |
| Author | A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, In-Hwan Lee*, S. J. Pearton |
Publication Laboratory for Optoelectronic Materials
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