Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition > Journal

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Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition
Year	2016
Journal	Appl. Phys. Express
Author	In-Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Eugene B. Yakimov, Sergey A. Tarelkin, Andery V. Turutin, Ivan V. Shemerov, Stephen J. Pearton
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