| Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN | |
|---|---|
| Year | 2016 |
| Journal | J. Appl. Phys. |
| Author | In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, S. A. Tarelkin, A. V. Turutin, I. V. Shemerov, S. J. Pearton |
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